| PART |
Description |
Maker |
| AGR19045EF |
45 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| EMRS-6X1_1 EMRS-6X1 EMRS-6X1TR EMRS-6X11 |
E-Series Surface Mount Mixer 925-960 MHz, 1805-1880 MHz, 1930-1990 MHz
|
MACOM[Tyco Electronics]
|
| TQ3M31 |
832-894 MHz & 1930-1990 MHz Dual Band LNA
From old datasheet system
Dual Band LNA: 2.8V, Cellular and PCS Band CDMA/AMPS LNA IC
|
TRIQUINT[TriQuint Semiconductor]
TriQuint Semiconductor,Inc.
|
| MAFRIN0540 |
Single Junction Drop-In Circulator 1930 MHz-1990 MHz
|
M/A-COM Technology Solutions, Inc.
|
| MADCSM0001TR MADCSM0001 MADCSM0001SMB |
Dual-Band/Triple-Mode Downconverter 869 - 893 MHz and 1930 - 1990 MHz
|
MACOM[Tyco Electronics]
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| 1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor
|
GHz Technology
|
| MHL19926 |
MHL19926 1930-1990 MHz, 10 W, 29.4 dB RF Linear LDMOS Amplifier
|
Motorola
|
| MHW1910D |
MHW1910-1 1930-1990 MHz, 10 W RF Power LDMOS Amplifier - Archived
|
Motorola
|
| PTFA190451E PTFA190451F |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 1930 - 1990 MHz
|
Infineon Technologies AG
|
| PTFA192001F PTFA192001E |
Thermally-Enhanced High Power RF LDMOS FETs 200 W, 1930-1990 MHz
|
Infineon Technologies AG
|
| MRF6S19140H |
MRF6S19140HSR3 1930-1990 MHz, 29 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
MOTOROLA
|
